ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG60R180FSF
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| Gate Charge(Qg) | 35.5nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
600V 3.9V 34W 180mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS