ORIENTAL SEMI OSG60R180FF

ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG60R180FF

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Specifications

Gate Charge(Qg)23.3nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)3.94pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.44nF

Technical details

650V 20A Through Hole TO-220F

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