ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG55R160FZF
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| Gate Charge(Qg) | 21.3nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Output Capacitance(Coss) | 145.8pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| RDS(on) | 160mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.511nF |
550V 23A 4.5V 34W 160mΩ@10V TO-220F-3 Single FETs, MOSFETs RoHS