ORIENTAL SEMI OSG55R140HF

ORIENTAL SEMI · FETs & Power MOSFETs · MPN OSG55R140HF

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Specifications

Gate Charge(Qg)24.1nC@10V
Drain to Source Voltage550V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation151W
Reverse Transfer Capacitance (Crss@Vds)4.14pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 550V 23A 151W Through Hole TO-247

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