onsemi · FETs & Power MOSFETs · MPN VEC2616-TL-W
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 505pF |
60V 2.6V 900mW 62mΩ@10V 1 N-Channel + 1 P-Channel SOT-28FL Single FETs, MOSFETs RoHS