onsemi TIP29CG

onsemi · Transistors (BJTs) · MPN TIP29CG

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Specifications

Current - Collector Cutoff300uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation30W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN 100V 1A 3MHz 30W Through Hole TO-220

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