onsemi TIP112G

onsemi · Transistors (BJTs) · MPN TIP112G

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))2.5V
Operating Temperature-65℃~+150℃@(Tj)

Technical details

100V 1000 NPN 2A TO-220 Single Bipolar Transistors RoHS

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