onsemi · Transistors (BJTs) · MPN TIP111G
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| Current - Collector Cutoff | 1mA |
|---|---|
| Vbe On(VBE(on)) | 2.8V |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 2W |
| type | NPN |
| Current - Collector(Ic) | 2A |
| Vce Saturation(VCE(sat)) | 2.5V |
| Operating Temperature | -65℃~+150℃@(Tj) |
80V 1000 NPN 2A TO-220 Single Bipolar Transistors RoHS