onsemi TIP102G

onsemi · Transistors (BJTs) · MPN TIP102G

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))2.5V
Operating Temperature-65℃~+150℃@(Tj)

Technical details

100V 1000 NPN 8A TO-220 Single Bipolar Transistors RoHS

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