onsemi SVD5865NLT4G

onsemi · FETs & Power MOSFETs · MPN SVD5865NLT4G

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)137pF
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

60V 46A 2V 71W 13mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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