onsemi · FETs & Power MOSFETs · MPN SSS10N60B
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 70nC@10V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
| Type | N-Channel |
600V 9A 4V 50W 800mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS