onsemi SSR2N60BTF

onsemi · FETs & Power MOSFETs · MPN SSR2N60BTF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)46pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)9.9pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)490pF
TypeN-Channel

Technical details

600V 1.8A 4V 2.5W 5Ω@10V 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs RoHS

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