onsemi SSP3N80A

onsemi · FETs & Power MOSFETs · MPN SSP3N80A

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)35nC
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)750pF
TypeN-Channel

Technical details

800V 3A 3.5V 100W 4.8Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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