onsemi · FETs & Power MOSFETs · MPN SSP1N50B
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 520V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.2pF |
| RDS(on) | 5.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
| Type | N-Channel |
520V 1.5A 4V 3.5W 5.3Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS