onsemi SSI7N60BTU

onsemi · FETs & Power MOSFETs · MPN SSI7N60BTU

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.5W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

600V 7A 4V 5.5W 1.2Ω@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS

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