onsemi SSD2025TF

onsemi · FETs & Power MOSFETs · MPN SSD2025TF

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
RDS(on)100mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)-

Technical details

60V 3.3A 1V 2W 100mΩ@10V 2 N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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