onsemi SS8550DBU

onsemi · Transistors (BJTs) · MPN SS8550DBU

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain45
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 25V 1.5A 200MHz 1W Through Hole TO-92-3

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