onsemi SMUN5335DW1T1G

onsemi · Transistors (BJTs) · MPN SMUN5335DW1T1G

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Output Voltage(VO(on))200mV
Input Resistor2.2kΩ
Resistor Ratio0.047
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation187mW
Input Voltage (VI(on)@Ic,Vce)800mV@5mA,200mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

80 1 NPN Pre-Biased, 1 PNP Pre-Biased 187mW 100mA 50V SC-88 Bipolar Transistor Arrays, Pre-Biased RoHS

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