onsemi SMUN5212T1G

onsemi · Transistors (BJTs) · MPN SMUN5212T1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain60
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation202mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2.5V

Technical details

50V 60 100mA 202mW NPN 1 NPN (Pre-Biased) SC-70 Single, Pre-Biased Bipolar Transistors RoHS

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