onsemi SMUN5116DW1T1G

onsemi · Transistors (BJTs) · MPN SMUN5116DW1T1G

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Specifications

DC Current Gain160
Input Resistor6.1kΩ
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation187mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

160 2 PNP Pre-Biased Transistors 187mW 100mA 50V SC-88-6(SC-70-6) Bipolar Transistor Arrays, Pre-Biased RoHS

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