onsemi SMUN2114T1G

onsemi · Transistors (BJTs) · MPN SMUN2114T1G

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor13kΩ
typePNP
Resistor Ratio0.25
Number1 PNP Pre-Biased
Pd - Power Dissipation230mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.2V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 230mW Surface Mount SC-59

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