onsemi SMSD602-RT1G

onsemi · Transistors (BJTs) · MPN SMSD602-RT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain120
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59

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