onsemi SI9936DY

onsemi · FETs & Power MOSFETs · MPN SI9936DY

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
RDS(on)50mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)525pF

Technical details

30V 5A 1V 50mΩ@10V 2 N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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