onsemi SI9933BDY

onsemi · FETs & Power MOSFETs · MPN SI9933BDY

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)115mΩ@2.7V
Number2 P-Channel
Input Capacitance(Ciss)825pF
TypeP-Channel

Technical details

20V 3.4A 1.5V 2W 115mΩ@2.7V 2 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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