onsemi · FETs & Power MOSFETs · MPN SI9933BDY
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| Gate Charge(Qg) | 20nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 115mΩ@2.7V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 825pF |
| Type | P-Channel |
20V 3.4A 1.5V 2W 115mΩ@2.7V 2 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS