onsemi · FETs & Power MOSFETs · MPN SI9926DY
No reviews yet — be the first to review onsemi SI9926DY.
| Current - Continuous Drain(Id) | 6.5A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 43mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 700pF |
| Gate Charge(Qg) | 10nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 175pF |
6.5A 2W 43mΩ@2.5V 1.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS