onsemi SI9435DY

onsemi · FETs & Power MOSFETs · MPN SI9435DY

No reviews yet — be the first to review onsemi SI9435DY.

Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)306pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)77pF
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)690pF
TypeP-Channel

Technical details

30V 5.3A 3V 1.2W 50mΩ@10V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs