onsemi SI9426DY

onsemi · FETs & Power MOSFETs · MPN SI9426DY

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Specifications

Gate Charge(Qg)60nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)890pF
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)13.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.15nF
TypeN-Channel

Technical details

20V 10.5A 1.5V 13.5mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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