onsemi · FETs & Power MOSFETs · MPN SI6955DQ
No reviews yet — be the first to review onsemi SI6955DQ.
| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 2.5A |
| Pd - Power Dissipation | 1W |
| RDS(on) | 190mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 30V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 298pF |
| Gate Charge(Qg) | 15nC@10V |
| Operating Temperature | -55℃~+150℃ |
2.5A 1W 190mΩ@4.5V 1.9V 2 P-Channel TSSOP-8 FET, MOSFET Arrays RoHS