onsemi · FETs & Power MOSFETs · MPN SI6953DQ
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 1.9A |
| Pd - Power Dissipation | 1W |
| RDS(on) | 320mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 218pF |
| Gate Charge(Qg) | 10nC@10V |
| Operating Temperature | -55℃~+150℃ |
1.9A 1W 320mΩ@4.5V 3V 2 P-Channel TSSOP-8 FET, MOSFET Arrays RoHS