onsemi SI6467DQ

onsemi · FETs & Power MOSFETs · MPN SI6467DQ

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Specifications

Gate Charge(Qg)96nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)994pF
Current - Continuous Drain(Id)9.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)559pF
RDS(on)21.5mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)5.878nF
TypeP-Channel

Technical details

20V 9.2A 1.5V 1.3W 21.5mΩ@1.8V 1 P-Channel P-Channel TSSOP-8 Single FETs, MOSFETs RoHS

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