onsemi · FETs & Power MOSFETs · MPN SI4963DY
No reviews yet — be the first to review onsemi SI4963DY.
| Current - Continuous Drain(Id) | 6.2A |
|---|---|
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 50mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.456nF |
| Gate Charge(Qg) | 20nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 300pF |
6.2A 1.6W 50mΩ@2.5V 1.5V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS