onsemi · FETs & Power MOSFETs · MPN SI4953DY
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| Current - Continuous Drain(Id) | 4.9A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 95mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 750pF |
| Gate Charge(Qg) | 25nC@10V |
| Operating Temperature | -55℃~+150℃ |
4.9A 2W 95mΩ@4.5V 1V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS