onsemi · FETs & Power MOSFETs · MPN SI4532DY
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| Current - Continuous Drain(Id) | 3.9A;3.5A |
|---|---|
| Pd - Power Dissipation | 900mW |
| RDS(on) | 65mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 235pF |
| Gate Charge(Qg) | 15nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 30V 3.9A 3.5A 900mW Surface Mount SOIC-8