onsemi SI4466DY

onsemi · FETs & Power MOSFETs · MPN SI4466DY

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)66nC@5V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.7nF
TypeN-Channel

Technical details

20V 15A 1.5V 50W 7.5mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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