onsemi SI4420DY

onsemi · FETs & Power MOSFETs · MPN SI4420DY

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)53nC@5V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)12.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)255pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.18nF
TypeN-Channel

Technical details

30V 12.5A 1V 50W 13mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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