onsemi SI4416DY

onsemi · FETs & Power MOSFETs · MPN SI4416DY

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC@5V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)28mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.34nF
TypeN-Channel

Technical details

30V 9A 1V 2.5W 28mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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