onsemi SI3455DV

onsemi · FETs & Power MOSFETs · MPN SI3455DV

No reviews yet — be the first to review onsemi SI3455DV.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5nC@10V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)125mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)298pF
TypeP-Channel

Technical details

30V 3.6A 1V 1.6W 125mΩ@4.5V 1 P-Channel P-Channel SuperSOT-6 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs