onsemi SI3454DV

onsemi · FETs & Power MOSFETs · MPN SI3454DV

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)95mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)460pF
TypeN-Channel

Technical details

30V 4.2A 2V 1.6W 95mΩ@4.5V 1 N-channel N-Channel SuperSOT-6 Single FETs, MOSFETs RoHS

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