onsemi SI3443DV

onsemi · FETs & Power MOSFETs · MPN SI3443DV

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
RDS(on)65mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.079nF

Technical details

20V 4.4A 1.5V 2W 65mΩ@4.5V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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