onsemi SBCW66GLT1G

onsemi · Transistors (BJTs) · MPN SBCW66GLT1G

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 225mW Surface Mount SOT-23-3

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