onsemi SBC847CDXV6T1G

onsemi · Transistors (BJTs) · MPN SBC847CDXV6T1G

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Specifications

Current - Collector Cutoff15nA
DC Current Gain420
Pd - Power Dissipation500mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))600mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

420 500mW 45V NPN 100mA SOT-563 Bipolar Transistor Arrays RoHS

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