onsemi RFP70N06

onsemi · FETs & Power MOSFETs · MPN RFP70N06

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)206pF
RDS(on)14mΩ
Number1 N-channel
Input Capacitance(Ciss)2.25nF

Technical details

N-Channel 60V 70A 150W Through Hole TO-220AB

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