onsemi RFP40N10LE

onsemi · FETs & Power MOSFETs · MPN RFP40N10LE

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Specifications

Gate Charge(Qg)180nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)40mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

100V 40A 3V 150W 40mΩ@5V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

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