onsemi · FETs & Power MOSFETs · MPN RFP40N10_F102
No reviews yet — be the first to review onsemi RFP40N10_F102.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 150nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
100V 40A 4V 160W 40mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS