onsemi · FETs & Power MOSFETs · MPN RFP12N10L
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 200mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
100V 12A 2V 60W 200mΩ@5V 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS