onsemi RFD3055LESM9A

onsemi · FETs & Power MOSFETs · MPN RFD3055LESM9A

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.3nC@10V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)107mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

N-Channel 60V 11A 38W Surface Mount DPAK-3

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