onsemi · FETs & Power MOSFETs · MPN RFD3055LESM
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 11.3nC@10V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 38W |
| RDS(on) | 107mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
60V 11A 3V 38W 107mΩ@5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS