onsemi RFD16N05LSM_NL

onsemi · FETs & Power MOSFETs · MPN RFD16N05LSM_NL

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Specifications

Configuration-
Drain to Source Voltage50V
Gate Charge(Qg)80nC@10V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)47mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)121pF
TypeN-Channel

Technical details

50V 16A 2V 60W 47mΩ@4V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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