onsemi RFD16N05

onsemi · FETs & Power MOSFETs · MPN RFD16N05

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)45nC@10V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)47mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

50V 16A 4V 72W 47mΩ@10V 1 N-channel N-Channel IPAK Single FETs, MOSFETs

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