onsemi · FETs & Power MOSFETs · MPN RFD14N05SM9A
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| Gate Charge(Qg) | 40nC@20V |
|---|---|
| Drain to Source Voltage | 50V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 570pF |
50V 14A 4V 48W 100mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS